Samsung seems to be taking a fresh approach with its 6th-generation 1c DRAM, aiming to enhance yield rates and gain an advantage over its forthcoming HBM4 technology.
### Significance of Samsung’s 1c DRAM for HBM4 and the Memory Business
The Korean tech leader is considering a revamp of its 1c DRAM process. This move is essential for the success of its HBM4 technology. A report by ZDNet Korea suggests that since the latter half of 2024, Samsung has been reviewing designs for its advanced DRAM processes. This has culminated in a redesigned 1c DRAM, a key initiative to ensure the adoption of its upcoming HBM process, which unlike the HBM3 variants, struggled with integration by companies like NVIDIA.
According to the report, Samsung’s innovative DRAM process didn’t hit the desired yield rates, which were expected to be around 60% to 70%. This shortcoming hindered progress to mass production. Sources mentioned that the significant issue was the size of the 1c DRAM chip. Initially, Samsung aimed to shrink the chip size to increase production volume, but this compromised the process’s stability, leading to below-par yield rates.
> “Samsung Electronics has changed the design of its 1c DRAM to increase its chip size and is focusing on improving yields, targeting the middle of this year. It appears that they are focused on stable mass production of next-generation memory even if it costs more.”
> – ZDNet Korea
The 1c DRAM process is critical for the success of Samsung’s HBM4 products. Competitors, such as SK Hynix and Micron, have already polished their designs, putting pressure on Samsung to keep pace. With Samsung’s reputation still recovering from issues surrounding its HBM3, it’s vital that the 1c DRAM process meets industry expectations.
Currently, the outcome of Samsung’s 6th-generation DRAM process remains uncertain. However, there are claims of potential progress in the coming months. This development could set Samsung’s HBM4 process on the path to mass production, anticipated by the year’s end.
